Hermetic Infrared Emitting Diode
OP130 Series
Features:
?
TO-46 hermetically sealed package
?
?
?
?
?
Focused and non-focused optical light pattern
Enhanced temperature range
Mechanically and spectrally matched to other OPTEK devices
Choice of power ranges
Choice of narrow or wide irradiance pattern
“W”
Description:
Each OP130 series device is a 935 nm gallium arsenide (GaAs) infrared LED mounted in a hermetically sealed TO
-46 package that provides an enhanced temperature range with a variety of power ranges The TO-46 housing
also offers high power dissipation and superior protection for hostile environments.
Each OP130 device has a narrow beam with an inclusive angle at half power points of 18°. Each OP130W series
device has a broad irradiance pattern of 50° at half power points, providing relatively even illumination over a large
area. These devices are designed to efficiently operate with OP800, OP593, OP598 and OP599 phototransistors
or the OP830 photodarlington.
Please refer to Application Bulletins 208 and 210 for additional design information and reliability (degradation) data.
Custom electrical, wire and cabling and connectors are available. Contact your local representative or OPTEK for
more information.
(mW/cm 2 )
Applications:
? Non-contact reflective object sensor
? Assembly line automation
? Machine automation
? Machine safety
? End of travel sensor
? Door sensor
Part LED Peak
Number Wavelength
OP130
OP131
OP132
Ordering Information
Output Power
Lens Total Beam
Type Angle
Min / Max
1.0 / NA
3.0 / NA
Dome 18°
4.0 / NA
Lead
Length
(Min)
OP133
OP130W
935 nm
5.0 / NA
1.0 / NA
0.50"
OP131W
OP132W
OP133W
3.0 / NA
4.0 / NA
5.0 / NA
Flat
50°
RoHS
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
Issue B
10/2012
Page 1 of 4
相关PDF资料
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OP230WPS DIODE INFRARED EMITTING HERMETIC
OP234W DIODE IR HS HP GAAIAS FLAT TO-46
OP235TXV DIODE IR EMITTING GAAIAS TO-46
OP235W DIODE IR HS HP GAAIAS FLAT TO-46
相关代理商/技术参数
OP14 制造商:AD 制造商全称:Analog Devices 功能描述:DUAL MATCHED HIGH PERFORMANCE OPERATIONAL AMPLIFIERS
OP-14 制造商:AD 制造商全称:Analog Devices 功能描述:DUAL MATCHED HIGH PERFORMANCE OPERATIONAL AMPLIFIERS
OP140A 功能描述:红外发射源 IR EMITTING DIODE RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk
OP140B 功能描述:红外发射源 Infrared 935nm RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk
OP140C 功能描述:红外发射源 Infrared 935nm RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk
OP140D 功能描述:红外发射源 Infrared 935nm RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk
OP141A 功能描述:红外发射源 Infrared 935nm 828-OP141B RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk
OP141B 功能描述:红外发射源 Infrared 935nm RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk